发明名称 Integrated Circuit Structures, Semiconductor Structures, And Semiconductor Die
摘要 Methods for fabricating integrated circuit devices on an acceptor substrate devoid of circuitry are disclosed. Integrated circuit devices are formed by sequentially disposing one or more levels of semiconductor material on an acceptor substrate, and fabricating circuitry on each level of semiconductor material before disposition of a next-higher level. After encapsulation of the circuitry, the acceptor substrate is removed and semiconductor dice are singulated. Integrated circuit devices formed by the methods are also disclosed.
申请公布号 US2014203409(A1) 申请公布日期 2014.07.24
申请号 US201414221655 申请日期 2014.03.21
申请人 Micron Technology, Inc. 发明人 Sandhu Gurtej S.;Parat Kristina K.
分类号 H01L23/538 主分类号 H01L23/538
代理机构 代理人
主权项
地址 Boise ID US