SEMICONDUCTOR DEVICE PRODUCING METHOD AND SUBSTRATE TREATMENT DEVICE

摘要

Problem: To provide a semiconductor device producing method and a substrate treatment device wherein a work function value can be adjusted. Solution: This method includes the steps of: forming a first layer on the substrate in a processing chamber by supplying a metal-containing gas that contains a metal element and carbon-containing gas thereto, the first layer containing the metal element and carbon; and forming a second layer by supplying a nitrogen-containing gas to the substrate with the first layer formed thereon, so as to nitride the first layer, the second layer containing the metal element, carbon, and nitrogen. The step of forming the first layer and the step of forming the second layer are performed alternately so that the steps are performed predetermined times each, whereby a film that has a predetermined film thickness and contains the metal element, carbon, and nitrogen is formed on the substrate. The number of times when the step of forming the first layer is performed is controlled with respect to the number of times when the step of forming the second layer is performed, whereby a work function of the film containing the metal element, carbon, and nitrogen is adjusted so as to have a desired value.