发明名称
摘要 A process for forming a layer (26) of semiconductor material from a substrate (20), or donor substrate, made of the same semiconductor material is described, comprising: formation in said donor substrate of a high lithium concentration zone (22), with a concentration between 5×1018 atoms/cm3 and 5×1020 atoms/cm3, then a hydrogen implantation (24) in the donor substrate, in, or in the vicinity of, the high lithium concentration zone, application of a stiffener (19) with the donor substrate, application of a thermal budget to result in the detachment of the layer (34) defined by the implantation.
申请公布号 JP2014518010(A) 申请公布日期 2014.07.24
申请号 JP20140508753 申请日期 2012.04.27
申请人 发明人
分类号 H01L21/02;H01L21/22;H01L21/265;H01L27/12 主分类号 H01L21/02
代理机构 代理人
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