METHOD OF FORMING A SEMICONDUCTOR STRUCTURE INCLUDING A VERTICAL NANOWIRE

摘要

A method comprises providing a semiconductor structure comprising a substrate and a nanowire above the substrate. The nanowire comprises a first semiconductor material and extends in a vertical direction of the substrate. A material layer is formed above the substrate. The material layer annularly encloses the nanowire. A first part of the nanowire is selectively removed relative to the material layer. A second part of the nanowire is not removed. A distal end of the second part of the nanowire distal from the substrate is closer to the substrate than a surface of the material layer so that the semiconductor structure has a recess at the location of the nanowire. The distal end of the nanowire is exposed at the bottom of the recess. The recess is filled with a second semiconductor material. The second semiconductor material is differently doped than the first semiconductor material.

主权项

1. A method, comprising:
providing a semiconductor structure comprising a substrate and a nanowire above said substrate, the nanowire comprising a first semiconductor material and extending in a vertical direction of said substrate; forming a material layer above said substrate, the material layer annularly enclosing said nanowire; selectively removing a first part of said nanowire relative to said material layer, wherein a second part of said nanowire is not removed, a distal end of said second part of said nanowire distal from said substrate being closer to said substrate than a surface of said material layer so that said semiconductor structure has a recess at a location of said nanowire, the distal end of said nanowire being exposed at the bottom of said recess; and filling said recess with a second semiconductor material, the second semiconductor material being differently doped than said first semiconductor material.