发明名称 |
ADHESION LAYER AND MULTIPHASE ULTRA-LOW k DIELECTRIC MATERIAL |
摘要 |
A dielectric material incorporating a graded carbon adhesion layer whereby the content of C increases with layer thickness and a multiphase ultra low k dielectric comprising a porous SiCOH dielectric material having a k less than 2.7 and a modulus of elasticity greater than 7 GPa is described. A semiconductor integrated circuit incorporating the above dielectric material in interconnect wiring is described and a semiconductor integrated circuit incorporating the above multiphase ultra low k dielectric in a gate stack spacer of a FET is described. |
申请公布号 |
US2014203336(A1) |
申请公布日期 |
2014.07.24 |
申请号 |
US201414164555 |
申请日期 |
2014.01.27 |
申请人 |
International Business Machines Corporation |
发明人 |
GRILL ALFRED;HAIGH THOMAS JASPER;MALONE KELLY;NGUYEN SON VAN;PATEL VISHNUBHAI VITTHALBHAI;SHOBHA HOSADURGA |
分类号 |
H01L29/51;H01L23/532 |
主分类号 |
H01L29/51 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Armonk NY US |