Semiconductor Integrated Circuit and Fabricating the Same

摘要

A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes receiving a precursor. A decomposable polymer layer (DPL) is deposited between the conductive features of the precursor. The DPL is annealed to form an ordered periodic pattern of different types of polymer nanostructures. One type of polymer nanostructure is decomposed by a first selectively to form a trench. The trench is filled by a dielectric layer to form a dielectric block. The remaining types of polymer nanostructures are decomposed by a second selectively etching to form nano-air-gaps.

主权项

1. A method for fabricating a semiconductor integrated circuit (IC), the method comprising:
receiving a precursor, the precursor including:
a substrate;conductive features extending above the substrate; anda space between the conductive features; depositing a decomposable polymer layer (DPL) in the space between the conductive features on the precursor; annealing the DPL to form an ordered periodic pattern of different types of polymer nanostructures between the conductive features; performing a first selective etch to decompose a first type of the polymer nanostructures to form a trench and a template with the ordered repeating periodic pattern of the trench and a second type of polymer nanostructures between conductive features; filling in the trench with a dielectric layer to form a dielectric block; and performing a second selectively etching to decompose the second type of polymer nanostructures to form a dielectric matrix of nano-air gaps and the dielectric block between constructive features.