| 发明名称 |
DIODE AND POWER CONVERSION DEVICE |
| 摘要 |
The purpose of the present invention is to provide a diode which can be manufactured with a simple method and has a favorable recovery operation. The diode according to the present invention includes a layer having a high impurity concentration and a layer having a low impurity concentration, and the layer having a low impurity concentration further includes a layer having an activation rate different from other portions (see Fig. 1). |
| 申请公布号 |
WO2014112228(A1) |
申请公布日期 |
2014.07.24 |
| 申请号 |
WO2013JP82454 |
申请日期 |
2013.12.03 |
| 申请人 |
HITACHI POWER SEMICONDUCTOR DEVICE, LTD. |
发明人 |
ISHIMARU TETSUYA;MORI MUTSUHIRO |
| 分类号 |
H01L29/861;H01L21/265;H01L21/322;H01L27/04;H01L29/78;H01L29/868 |
主分类号 |
H01L29/861 |
| 代理机构 |
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