SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

To provide a highly reliable semiconductor device. The semiconductor device includes a first oxide layer over an insulating film; an oxide semiconductor layer over the first oxide layer; a gate insulating film over the oxide semiconductor layer; and a gate electrode over the gate insulating film. The first oxide layer contains indium. The oxide semiconductor layer contains indium and includes a channel formation region. The distance from the interface to the channel formation region is 20 nm or more, preferably 30 nm or more, further preferably 40 nm or more, still further preferably 60 nm or more.

主权项

1. A semiconductor device comprising:
an insulating layer; a first oxide layer on and in contact with the insulating layer; an oxide semiconductor layer on and in contact with the first oxide layer; and a conductive layer over the oxide semiconductor layer, wherein a thickness of the first oxide layer is 20 nm or more.