SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

First and second ranges (RA, RB) of a silicon carbide film (90) are provided with an interface (IF). The first range (RA) includes: a first withstand-voltage maintaining layer (81A) having a first conductivity type; and outer-edge embedded regions (TB) which are provided at the interface (IF) in an outer-edge portion (PT), and which have a second conductivity type. The second range (RB) includes a second withstand-voltage maintaining layer (81B) having the first conductivity type. Semiconductor elements (EL) are formed in the second range (RB). The first range (RA) is provided with: central sections (CC) which face, in the width direction, the semiconductor elements (EL) in a central portion (PC); and an outer-edge section (CT) which faces, in the width direction, the semiconductor element (EL) in the outer-edge portion (PT). Upon the interface (IF), the outer-edge section (CT) includes a part having an impurity concentration different to the impurity concentration of the central sections (CC).