| 摘要 |
A semiconductor device having a diode region (11) and an insulated gate bipolar transistor (IGBT) region (13) formed on the same semiconductor substrate is provided. The diode region is exposed at the surface of the semiconductor substrate (100), and is provided with a plurality of first conductive anode layers (115, 116), which are isolated from each other. The IGBT region is exposed at the surface of the semiconductor substrate, and is provided with a plurality of first conductive body contact layers (135), which are isolated from each other. The anode layer is provided with at least one first anode layer (116). The first anode layer (116) is formed at a position close to at least the IGBT region. The area of each first anode layer (116) in the planar direction of the semiconductor substrate is greater than the area of the body contact layer (135) nearest to the diode region in the planar direction of the semiconductor substrate. Thus, because many holes are injected from the first anode layer (116), the forward voltage of a first diode region (11a) can be reduced. A rise in the forward voltage of the diode region due to a decrease in the holes injected from the body contact layer (135), and an increase in heat loss can be minimized. |
