| 发明名称 |
MEMORY WITH ELEMENTS HAVING TWO STACKED MAGNETIC TUNNELING JUNCTION (MTJ) DEVICES |
| 摘要 |
A magnetic memory having memory elements each with two magnetic tunneling junction (MTJ) devices is disclosed. The devices in each element are differentially programmed with complementary data. The devices for each element are stacked one above the other so that the element requires no more substrate area than a single MTJ device. |
| 申请公布号 |
US2014204661(A1) |
申请公布日期 |
2014.07.24 |
| 申请号 |
US201113995631 |
申请日期 |
2011.12.22 |
| 申请人 |
Doyle Brian S.;Raychowdhury Arijit;Lee Yong Ju;Kuo Charles C.;Oguz Kaan;Kencke David L.;Chau Robert S.;Golizadeh Mojarad Roksana |
发明人 |
Doyle Brian S.;Raychowdhury Arijit;Lee Yong Ju;Kuo Charles C.;Oguz Kaan;Kencke David L.;Chau Robert S.;Golizadeh Mojarad Roksana |
| 分类号 |
H01L43/02;G11C11/16 |
主分类号 |
H01L43/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A magnetic memory element comprising:
two magnetic tunneling junction (MTJ) devices one stacked above the other, each having a pair of terminals; a transistor, coupled to one terminal of each MTJ device; and the other terminal of each MTJ device being coupled to a pair of bit lines. |
| 地址 |
Portland OR US |
