发明名称 |
SEMICONDUCTOR MEMORY ELEMENT AND PRODUCTION METHOD THEREFOR |
摘要 |
<p>A semiconductor memory element is provided. A vertical electrode is provided on a substrate, while a blocking insulating layer is provided on a side wall of the vertical electrode. A plurality of active patterns separated from the vertical electrode are provided by means of the blocking insulating layer. Data storage patterns are provided between the active patterns.</p> |
申请公布号 |
WO2014112761(A1) |
申请公布日期 |
2014.07.24 |
申请号 |
WO2014KR00371 |
申请日期 |
2014.01.14 |
申请人 |
IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) |
发明人 |
SONG, YUN HEUB;YANG, HYUNG JUN |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|