| 摘要 |
Disclosed is a light emitting device having improved injection efficiency of a hole. According to an embodiment of the present invention, the light emitting device comprises a first semiconductor layer in which a first conductivity type dopant is doped; a second semiconductor layer in which a second conductivity type dopant is doped; and an activating layer which is disposed between the first semiconductor layer and the second semiconductor layer and includes a well layer and a plurality of pair structures of a large barrier layer having a larger energy band gap than the well layer, wherein at least one of the barrier layers includes two first barrier layers which are adjacent to the well layer and a second barrier layer between the two first barrier layers, and the second barrier layer is made of a superlattice structure in which a plurality of first layers and second layers are alternately stacked, wherein the second conductivity type dopant is doped into the first layer. |
