SONOS memory device

摘要

A bandgap engineered SONOS device structure for design with various AND architectures to perform a source side injection programming method. The BE-SONOS device structure (100) comprises a spacer oxide (O s ) disposed between a control gate (110) overlaying an oxide-nitride-oxide-nitride-oxide stack and a sub-gate (130) overlaying a gate oxide. In a first embodiment, a BE-SONOS sub-gate-AND array architecture is constructed multiple columns of SONONOS devices with sub-gate lines and diffusion bitlines. In a second embodiment, a BE-SONOS sub-gate-inversion-bitline-AND architecture is constructed multiple columns of SONONOS devices with sub-gate inversion bitlines and with no diffusion bitlines.