| 摘要 |
The present invention relates to a technology related to fabrication of a next generation image sensor, and more particularly to a method of fabricating a next generation CMOS image sensor through which wafer-level package (WLP) performance of an image sensor can be improved through a low temperature process at 300°C or lower. The present invention provides a method of fabricating a next generation CMOS image sensor for performing a WLP process by manufacturing a sensor unit and applying a TSV technology, wherein a non-electrolytic gold NiB thin film is deposited on an aluminum pad exposed through a via hole formed through the TSV technology, an insulating film on a side surface of the via hole, and a hard mask at an upper portion of a wafer of the CMOS image sensor. |
