发明名称 |
PROCESS FOR PRODUCTION OF ALUMINUM-CONTAINING III NITRIDE SINGLE CRYSTAL |
摘要 |
A process for producing an aluminum-containing III nitride single crystal, comprising: a reaction step of bringing a halogen gas and aluminum into contact with each other at a temperature of 300 to 700°C inclusive, thereby producing a mixed gas comprising a gas of an aluminum trihalide and a gas of an aluminum monohalide; a conversion step of setting the temperature of the mixed gas at a temperature that is equal to or higher than a temperature at which a solid of the aluminum trihalide is precipitated and that is lower by 50°C or more than a temperature at which the halogen gas and aluminum have been reacted with each other in the reaction step, thereby converting the aluminum monohalide in the mixed gas into a solid substance; a separation step of separating the solid substance from the gas, thereby removing the gas of the aluminum trihalide; and a crystal growth step of using the gas of the aluminum trihalide as an aluminum nitride single crystal raw material without lowering the temperature and while keeping the temperature at a temperature that is equal to or higher than the temperature employed in the conversion step. |
申请公布号 |
EP2607527(A4) |
申请公布日期 |
2014.07.23 |
申请号 |
EP20110848944 |
申请日期 |
2011.12.15 |
申请人 |
TOKUYAMA CORPORATION |
发明人 |
NAGASHIMA, TORU;HIRONAKA, KEIICHIRO |
分类号 |
C01F7/58;C01F7/62;C30B25/00;C30B29/40;H01L21/205 |
主分类号 |
C01F7/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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