RESIN COMPOSITION FOR PHOTOIMPRINTING, PATTERNING METHOD AND ETCHING MASK

摘要

To provide a resin composition for photoimprinting, a cured product of which is excellent in the etching resistance and the heat resistance, and a pattern forming process using it. A resin composition for photoimprinting, comprising a photocurable monomer (A), a photocurable monomer (B) and a photopolymerization initiator (C), wherein the photocurable monomer (A) contains at least one carbazole compound represented by the following formula (1), the photocurable monomer (B) contains at least one member selected from the group consisting of compounds represented by the following formulae (2), (3) and (4), and the weight ratio of the photocurable monomer (A) to the photocurable monomer (B) (the weight of the photocurable monomer (A)/the weight of the photocurable monomer (B)) is from 30/70 to 87/13:
wherein R 1 is -CH=CH 2 or the like, and each of R 2 and R 3 is hydrogen or the like;
wherein each of R 4 and R 5 is -O-CH=CH 2 or the like, and each of R 6 and R 7 is hydrogen or the like;
wherein X is -O-CH=CH 2 or the like, each of A 1 to A 4 is a hydrogen atom or the like, and each of m, n and o is 0 or 1; and
wherein each of R 8 and R 9 is -O-CH=CH 2 or the like, and p is an integer of 0 or at least 1.