发明名称 |
Construction element made of a ferromagnetic shape memory material and use thereof |
摘要 |
The invention relates to the field of materials science and relates to a component, which can be used, for example, for microcomponents, microsensors and microactuators. The object of the present invention is to disclose a component in which a clearly greater relative length change occurs. The object is attained through a component of a ferromagnetic shape memory material, produced by a method in which at least one sacrificial layer is applied onto a single-crystalline or biaxially textured substrate, onto which sacrificial layer an epitaxial or textured layer of a ferromagnetic shape memory material with a layer thickness of ≦50 μm is applied, subsequently the sacrificial layer is removed at least partially, and during or after the layer application a structuring at least of the ferromagnetic shape memory material is realized such that an aspect ratio is achieved in which at least one length is greater by at least a factor of 3 than the thickness of the layer or the shortest dimension of the component. |
申请公布号 |
US8786276(B2) |
申请公布日期 |
2014.07.22 |
申请号 |
US200912995618 |
申请日期 |
2009.06.02 |
申请人 |
Leibniz-Institut fuer Festkoerper-und Werkstoffforschung Dresden E.V. |
发明人 |
Faehler Sebastian;Thomas Michael;Heczko Oleg;Buschbeck Joerg;McCord Jeffrey |
分类号 |
G01R33/02 |
主分类号 |
G01R33/02 |
代理机构 |
Greenblum & Bernstein, P.L.C. |
代理人 |
Greenblum & Bernstein, P.L.C. |
主权项 |
1. A component comprising at least one ferromagnetic shape memory material, which has during a temperature cycle a martensitic phase transition and in a martensitic state a magnetic stray field energy reduced by variant selection, and which can be used without an additional external magnetic field and with which the variant selection is realized without a thermo-mechanical training of a shape memory effect, said component produced by a method comprising:
applying at least one sacrificial layer onto a substrate; depositing a ferromagnetic shape memory material layer with a layer thickness of ≦50 μm; and after the depositing, at least partially removing the sacrificial layer. |
地址 |
Dresden DE |