Methods for depositing amorphous silicon

摘要

Methods for depositing an amorphous silicon layer on wafers are disclosed. A process wafer, a control wafer, and a dummy wafer may be loaded into a chamber where an amorphous silicon layer may be deposited on the process wafer. Afterwards, the process wafer and the control wafer may be removed from the chamber. The chamber and the dummy wafers are dry cleaned together. The dry cleaned dummy wafers are used in the next run for depositing amorphous silicon layer. The process may be controlled by a computer system issuing a control job comprising a first process job and a second process job, wherein the first process job is to deposit an amorphous silicon layer on the process wafer, and the second process job is to dry clean the chamber and the dummy wafer.

主权项

1. A method for depositing a layer, comprising:
loading into a chamber a process wafer, a control wafer, and a dummy wafer, the dummy wafer including a silicon oxide layer; depositing an amorphous silicon layer on the process wafer; removing the process wafer and the control wafer from the chamber; and dry cleaning the chamber and the dummy wafer.