发明名称 |
Thin-film transistor substrate and method of manufacturing the same |
摘要 |
A thin-film transistor substrate includes a gate line, and a gate electrode connected to the gate line, on a base substrate; an insulating layer on the gate electrode, the insulating layer including a first part and a second part, the first part having a hydrophobic property and the second part having a hydrophilic property; a data line extended in a different direction from the gate line, and a source electrode connected to the data line and on the second part of the insulating layer; a drain electrode on the second part of the insulating layer, the drain electrode spaced apart from the source electrode; a semi-conductor pattern overlapping the source electrode, the drain electrode and a gap between the spaced apart source and drain electrodes, where the semi-conductor pattern exposes the first part of the insulating layer; and a pixel electrode in contact with the drain electrode. |
申请公布号 |
US8785263(B2) |
申请公布日期 |
2014.07.22 |
申请号 |
US201213652967 |
申请日期 |
2012.10.16 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
Choi Tae-Young;Kim Bo-Sung |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
Cantor Colburn LLP |
代理人 |
Cantor Colburn LLP |
主权项 |
1. A method of manufacturing a thin-film transistor substrate, the method comprising:
providing a gate line, and a gate electrode connected to the gate line, on a base substrate; providing an insulating layer on the base substrate having the gate line and the gate electrode thereon; providing a data line and an electrode pattern on the base substrate having the insulating layer thereon, the data line extended in a direction crossing the gate line and the electrode pattern connected to the data line; hydrophobic-treating a surface of the insulating layer by using the data line and the electrode pattern as a mask; providing a source electrode and a drain electrode from the electrode pattern, the source electrode connected to the data line and the drain electrode spaced apart from the source electrode; providing a semi-conductor pattern overlapping the source electrode, the drain electrode and a gap between the spaced apart source and drain electrodes; and providing a pixel electrode on the base substrate having the semi-conductor pattern thereon, the pixel electrode connected to the drain electrode. |
地址 |
KR |