发明名称 Electronic components with reactive filters
摘要 An electronic component comprising a half bridge adapted for operation with an electrical load having an operating frequency is described. The half bridge comprises a first switch and a second switch each having a switching frequency, the first switch and the second switch each including a first terminal, a second terminal, and a control terminal, wherein the first terminal of the first switch and the second terminal of the second switch are both electrically connected to a node. The electronic component further includes a filter having a 3 dB roll-off frequency, the 3 dB roll-off frequency being less than the switching frequency of the switches but greater than the operating frequency of the electrical load. The first terminal of the filter is electrically coupled to the node, and the 3 dB roll-off frequency of the filter is greater than 5 kHz.
申请公布号 US8786327(B2) 申请公布日期 2014.07.22
申请号 US201213403813 申请日期 2012.02.23
申请人 Transphorm Inc. 发明人 Honea James;Wu Yifeng
分类号 H03K3/00 主分类号 H03K3/00
代理机构 Fish & Richardson P.C. 代理人 Fish & Richardson P.C.
主权项 1. An electronic component, comprising: a half bridge adapted for operation with an electrical load having an operating frequency, the half bridge comprising a first switch and a second switch each having a switching frequency, the first switch and the second switch each including a first terminal, a second terminal, and a control terminal, wherein the first terminal of the first switch and the second terminal of the second switch are both electrically connected to a node; and a filter having a 3 dB roll-off frequency, the 3 dB roll-off frequency being less than the switching frequency of the switches but greater than the operating frequency of the electrical load, and the first terminal of the filter being electrically coupled to the node; wherein the first switch or the second switch comprises a high-voltage depletion-mode transistor and a low-voltage enhancement-mode transistor, the high-voltage depletion-mode transistor comprising a source electrode, and the low-voltage enhancement-mode transistor being mounted directly on top of the source electrode of the high-voltage depletion-mode transistor; and the 3 dB roll-off frequency of the filter is greater than 5 kHz.
地址 Goleta CA US