| 发明名称 | Memory cell array and variable resistive memory device including the same | ||
| 摘要 | A memory cell array and a resistive variable memory device including the memory cell array are provided. The memory cell array includes a memory group. The memory cell array includes a pair of word lines, an inter-pattern insulating layer interposed between the pair of word lines, and a plurality of active pillars, each having one side contacted with the inter-pattern insulating layer and other sides surrounded by the word line. | ||
| 申请公布号 | US8785903(B2) | 申请公布日期 | 2014.07.22 |
| 申请号 | US201213601778 | 申请日期 | 2012.08.31 |
| 申请人 | SK Hynix Inc. | 发明人 | Kim Sung Cheoul;Choi Kang Sik |
| 分类号 | H01L29/06 | 主分类号 | H01L29/06 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A memory cell array, comprising: a pair of word lines; an inter-pattern insulating layer interposed between the pair of word lines; and a plurality of active pillars, each having one side contacted with the inter-pattern insulating layer and other sides surrounded by the word line. | ||
| 地址 | Gyeonggi-do KR | ||