Fast analog memory cell readout using modified bit-line charging configurations

摘要

A method for data storage includes providing at least first and second readout schemes for reading storage values from a group of analog memory cells that are connected to respective bit lines. The first readout scheme reads the storage values using a first bit line charging configuration having a first sense time, and the second readout scheme reads the storage values using a second bit line charging configuration having a second sense time, shorter than the first sense time. A condition is evaluated with respect to a read operation that is to be performed over a group of the memory cells. One of the first and second readout schemes is selected responsively to the evaluated condition. The storage values are read from the group of the memory cells using the selected readout scheme.

主权项

1. A method for data storage, comprising:
providing at least first and second readout schemes for reading storage values from a group of non-volatile memory cells that are connected to respective bit lines, such that the first readout scheme reads the storage values using a first bit line charging configuration having a first sense time and the second readout scheme reads the storage values using a second bit line charging configuration having a second sense time, wherein the second sense time is shorter than the first sense time; evaluating a condition with respect to a read operation that is to be performed over the group of the memory cells; selecting one of the first and second readout schemes responsively to the evaluated condition; and reading the storage values from the group of the memory cells using the selected readout scheme; wherein the group of the memory cells belong to a word line selected from among multiple word lines, wherein the first readout scheme applies pass voltages with first voltage levels to word lines other than the selected word line while reading the group of the memory cells, wherein the second readout scheme applies pass voltages with second voltage levels to the word lines other than the selected word line, and wherein at least one of the second voltage levels is higher than a corresponding one of the first voltage levels.