| 发明名称 | In-Ga-Zn-type oxide, oxide sintered body, and sputtering target | ||
| 摘要 | An oxide including indium (In), gallium (Ga) and zinc (Zn), wherein diffraction peaks are observed at positions corresponding to incident angles (2θ) of 7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5° and 56.5° to 59.5° in an X-ray diffraction measurement (CuKα rays), and one of diffraction peaks observed at positions corresponding to incident angles (2θ) of 30.6° to 32.0° and 33.8° to 35.8° is a main peak and the other is a sub peak. | ||
| 申请公布号 | US8784699(B2) | 申请公布日期 | 2014.07.22 |
| 申请号 | US201013257683 | 申请日期 | 2010.11.17 |
| 申请人 | Idemitsu Kosan Co., Ltd. | 发明人 | Yano Koki;Itose Masayuki;Kawashima Hirokazu |
| 分类号 | C09D1/00;H01B1/02;C23C14/00;B32B15/00;H01L29/10;H01L29/06;H01L29/12;H01L21/00;H01L21/16;C01G15/00;C04B35/626;C23C14/08;H01L29/786;C04B35/453;C01G9/02;C23C14/34;H01L29/66;H01L21/02 | 主分类号 | C09D1/00 |
| 代理机构 | Millen, White, Zelano & Branigan, P.C. | 代理人 | Millen, White, Zelano & Branigan, P.C. |
| 主权项 | 1. An oxide comprising indium (In), gallium (Ga) and zinc (Zn), wherein diffraction peaks are observed at positions corresponding to incident angles (2θ) of 7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5° and 56.5° to 59.5° in an X-ray diffraction measurement (CuKα rays), and one of diffraction peaks observed at positions corresponding to incident angles (2θ) of 30.6° to 32.0° and 33.8° to 35.8° is a main peak and the other is a sub peak. | ||
| 地址 | Tokyo JP | ||