| 摘要 |
A method of forming an encapsulated wide trench includes providing a silicon on oxide insulator (SOI) wafer, defining a first side of a first sacrificial silicon slab by etching a first trench in a silicon layer of the SOI wafer, defining a second side of the first sacrificial silicon slab by etching a second trench in the silicon layer, forming a first sacrificial oxide portion in the first trench, forming a second sacrificial oxide portion in the second trench, forming a polysilicon layer above the first sacrificial oxide portion and the second sacrificial oxide portion, and etching the first sacrificial oxide portion and the second sacrificial oxide portion. |
