发明名称 SEMICONDUCTOR MEMORY DEVICE INCLUDING ROW DECODER AND PROGRAM METHOD THEREOF
摘要 The present invention relates to a semiconductor memory apparatus and a program method thereof. The semiconductor memory apparatus according to an embodiment of the present invention comprises memory cells connected to a plurality of word lines and a plurality of bit lines; a row decoder for selecting one or more word lines; and a read and write circuit for applying a plurality of program allowance voltages to selected bit lines by selecting the bit lines. The bit lines are divided into a plurality of bit line groups. A higher program allowance voltage is applied to the bit lines which belong to the corresponding bit line group when the bit line group is close to the row decoder.
申请公布号 KR20140091298(A) 申请公布日期 2014.07.21
申请号 KR20130003397 申请日期 2013.01.11
申请人 SK HYNIX INC. 发明人 KIM, EUN HONG
分类号 G11C7/10;G11C7/12;G11C8/10;G11C16/06 主分类号 G11C7/10
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