| 摘要 |
The present invention provides a sputtering device which is characterized by comprising a chamber defining a reaction area where a substrate is positioned, targets which are installed inside the chamber and arranged to be separated from each other at predetermined intervals and of which one surface faces the substrate while being spaced apart from the substrate, a plurality of backing plates that is positioned on the other surface of the targets, respectively, and fixates each of the targets, and a ground shield positioned between the adjoining backing plates; and to a sputtering method for an oxide semiconductor material capable of preventing the unwanted generation of arcs. Each target includes an erosional region and a non-erosional region. The ground shield is composed of first regions positioned on the backing plates and the lateral surfaces of the targets and second regions positioned on the top of the first regions. The second regions are extended to the upper part of the adjoining target and formed to cover the non-erosional regions. |
