发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To enable inhibition of breakage and the like at the time of division by dicing even when a semiconductor substrate is a thin layer.SOLUTION: A semiconductor device manufacturing method comprises: thinning a substrate 101 from a rear face side after bonding a first support substrate 104 to a first adhesion layer 103; forming substrate through vias in the substrate 101; performing a rear face process such as forming a rear face wiring pattern on a rear face of the substrate 101; and subsequently dividing the thinned substrate 101 into a plurality of chips 105 by dicing from the rear face of the substrate 101. |
申请公布号 |
JP2014132608(A) |
申请公布日期 |
2014.07.17 |
申请号 |
JP20130000164 |
申请日期 |
2013.01.04 |
申请人 |
NIPPON TELEGR & TELEPH CORP <NTT> |
发明人 |
TSUTSUMI TAKUYA;MATSUZAKI HIDEAKI;KOSUGI TOSHIHIKO |
分类号 |
H01L21/301 |
主分类号 |
H01L21/301 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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