发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To enable inhibition of breakage and the like at the time of division by dicing even when a semiconductor substrate is a thin layer.SOLUTION: A semiconductor device manufacturing method comprises: thinning a substrate 101 from a rear face side after bonding a first support substrate 104 to a first adhesion layer 103; forming substrate through vias in the substrate 101; performing a rear face process such as forming a rear face wiring pattern on a rear face of the substrate 101; and subsequently dividing the thinned substrate 101 into a plurality of chips 105 by dicing from the rear face of the substrate 101.
申请公布号 JP2014132608(A) 申请公布日期 2014.07.17
申请号 JP20130000164 申请日期 2013.01.04
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 TSUTSUMI TAKUYA;MATSUZAKI HIDEAKI;KOSUGI TOSHIHIKO
分类号 H01L21/301 主分类号 H01L21/301
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