| 发明名称 |
FILM-FORMING METHOD FOR FORMING SILICON OXIDE FILM ON TUNGSTEN FILM OR TUNGSTEN OXIDE FILM |
| 摘要 |
A film-forming method includes forming a tungsten film or a tungsten oxide film on an object to be processed, heating the object on which the tungsten film or the tungsten oxide film is formed, forming a seed layer on the tungsten film or the tungsten oxide film by supplying an aminosilane-based gas to a surface of the tungsten film or the tungsten oxide film, and forming a silicon oxide film on the seed layer by simultaneously supplying a silicon material gas including silicon and a gas including an oxidizing agent for oxidizing silicon. |
| 申请公布号 |
US2014199839(A1) |
申请公布日期 |
2014.07.17 |
| 申请号 |
US201414190416 |
申请日期 |
2014.02.26 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
SATO Jun;Chou Pao-Hwa |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A film-forming method of forming a silicon oxide film, the film-forming method comprising:
forming a tungsten film or a tungsten oxide film on an object to be processed; heating the object on which the tungsten film or the tungsten oxide film is formed; forming a seed layer on the tungsten film or the tungsten oxide film by supplying an aminosilane-based gas to a surface of the tungsten film or the tungsten oxide film; and forming a silicon oxide film on the seed layer by simultaneously supplying a silicon material gas including silicon and a gas including an oxidizing agent for oxidizing silicon. |
| 地址 |
Tokyo JP |
