发明名称 |
METHOD FOR MANUFACTURING A NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE MANUFACTURED THEREBY |
摘要 |
There is provided a method of manufacturing a nitride semiconductor light emitting device, the method including: forming a light emitting structure on a substrate, the light emitting structure including first and second conductivity-type nitride semiconductor layers with an active layer interposed therebetween; forming a first conductivity-type nitride semiconductor layer, an active layer and a second conductivity-type nitride semiconductor layer sequentially stacked on a substrate; forming a first electrode to be connected to the first conductivity-type nitride semiconductor layer; forming a photoresist film on the second conductivity-type nitride semiconductor layer to expose a portion of the second conductivity-type nitride semiconductor layer; and forming a reflective metal layer and a barrier metal layer as a second electrode consecutively on the portion of the second conductivity-type nitride semiconductor layer exposed by the photoresist film and removing the photoresist film. |
申请公布号 |
US2014197374(A1) |
申请公布日期 |
2014.07.17 |
申请号 |
US201114239231 |
申请日期 |
2011.08.17 |
申请人 |
Hwang Seok Min;Lee Jin Bock;Jang Tae Sung;Woo Jong Gun |
发明人 |
Hwang Seok Min;Lee Jin Bock;Jang Tae Sung;Woo Jong Gun |
分类号 |
H01L33/40 |
主分类号 |
H01L33/40 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a nitride semiconductor light emitting device, the method comprising:
forming a light emitting structure on a substrate, the light emitting structure including first and second conductivity-type nitride semiconductor layers with an active layer interposed therebetween; forming a first electrode to be connected to the first conductivity-type nitride semiconductor layer; forming a photoresist film on the second conductivity-type nitride semiconductor layer to expose a portion of the second conductivity-type nitride semiconductor layer; and forming a reflective metal layer and a barrier metal layer as a second electrode consecutively on the portion of the second conductivity-type nitride semiconductor layer exposed by the photoresist film and removing the photoresist film. |
地址 |
Pusan KR |