| 发明名称 |
PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR SI1-XGEX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION HAVING A PH VALUE OF 3.0 TO 5.5 |
| 摘要 |
A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si1-xGex material with 0.1≦x<1 in the presence of a chemical mechanical polishing (CMP) composition having a pH value in the range of from 3.0 to 5.5 and comprising: (A) inorganic particles, organic particles, or a mixture or composite thereof (B) at least one type of an oxidizing agent, and (C) an aqueous medium. |
| 申请公布号 |
US2014199841(A1) |
申请公布日期 |
2014.07.17 |
| 申请号 |
US201214130629 |
申请日期 |
2012.07.30 |
| 申请人 |
GAO Ning |
发明人 |
Noller Bastian Marten;Drescher Bettina;Gillot Christophe;Li Yuzhuo |
| 分类号 |
H01L21/306 |
主分类号 |
H01L21/306 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si1-xGex material with 0.1≦x<1
in the presence of a chemical mechanical polishing (CMP) composition having a pH value in the range of from 3.0 to 5.5 and comprising: (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of an oxidizing agent, and (C) an aqueous medium. |
| 地址 |
US |
