发明名称 REFLECTIVE OPTICAL ELEMENT AND OPTICAL SYSTEM FOR EUV LITHOGRAPHY
摘要 In order to reduce the negative influence of reactive hydrogen on the lifetime of a reflective optical element, particularly inside an EUV lithography device, there is proposed for the extreme ultraviolet and soft X-ray wavelength region a reflective optical element (50) having a reflective surface (60) with a multilayer system (51) and in the case of which the reflective surface (60) has a protective layer system (59) with an uppermost layer (56) composed of silicon carbide or ruthenium, the protective layer system (59) having a thickness of between 5 nm and 25 nm.
申请公布号 US2014199543(A1) 申请公布日期 2014.07.17
申请号 US201314082865 申请日期 2013.11.18
申请人 CARL ZEISS SMT GmbH 发明人 EHM Dirk Heinrich;HUBER Peter;MUELLENDER Stephan;VON BLANCKENHAGEN Gisela
分类号 G03F7/20 主分类号 G03F7/20
代理机构 代理人
主权项 1. A reflective optical element for the extreme ultraviolet and soft X-ray wavelength region comprising a reflective surface with a multilayer system, wherein the reflective surface has a protective layer system arranged thereon with an uppermost layer composed of silicon carbide or ruthenium, the protective layer system having a thickness of between 5 nm and 25 nm.
地址 Oberkochen DE