| 发明名称 |
SEMICONDUCTOR PORCELAIN COMPOSITION, POSITIVE TEMPERATURE COEFFICIENT ELEMENT, AND HEAT-GENERATING MODULE |
| 摘要 |
The present invention provides a semiconductor ceramic composition which is represented by a composition formula of [(Bi.A)x(Ba1-yRy)1-x](Ti1-zMz)aO3 (in which A is at least one kind of Na, Li and K, R is at least one kind of rare earth elements (including Y), and M is at least one kind of Nb, Ta and Sb), in which a, x, y and z satisfy 0.90≦a≦1.10, 0<x≦0.30, 0≦y≦0.050 and 0≦z≦0.010 and an average distance between voids, which is an average value of a space between voids being internally present, is 1.0 μm or more and 8.0 μm or less. |
| 申请公布号 |
US2014197156(A1) |
申请公布日期 |
2014.07.17 |
| 申请号 |
US201214239498 |
申请日期 |
2012.09.28 |
| 申请人 |
HITACHI METALS, LTD. |
发明人 |
Ino Kentaro;Shimada Takeshi;Ueda Itaro;Kida Toshiki |
| 分类号 |
H01C7/02 |
主分类号 |
H01C7/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor ceramic composition which is represented by a composition formula of [(Bi.A)x(Ba1-yRy)1-x](Ti1-zMz)aO3 (wherein A is at least one kind of Na, Li and K, R is at least one kind of rare earth elements (including Y), and M is at least one kind of Nb, Ta and Sb), wherein a, x, y and z satisfy 0.90≦a≦1.10, 0<x≦0.30, 0≦y≦0.050 and 0≦z≦0.010, and an average distance between voids, which is an average value of a space between voids being internally present, is 1.0 μm or more and 8.0 μm or less. |
| 地址 |
Tokyo JP |
