| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element manufacturing method which can inhibit generation of voids generated between a semiconductor laminated structure and a support substrate when the semiconductor laminated structure and the support substrate are bonded.SOLUTION: A semiconductor element manufacturing method comprises: an insulation film formation process of forming an insulation film on a part of a top face of a semiconductor laminated structure; a process of increasing a tilt angle at an outer peripheral end of the insulation film by etching the outer peripheral end of the insulation film; a process of forming electrodes in a region on the top face of the semiconductor laminated structure where the insulation film is not formed; a support substrate; and a process of bonding an electrode formation surface side of the semiconductor laminated structure with the support substrate. |
