METHOD OF FORMING SEMICONDUCTOR STRUCTURE HAVING CONTACT PLUG

摘要

A method of forming a semiconductor structure having at least a contact plug includes the following steps. At first, at least a transistor and an inter-layer dielectric (ILD) layer are formed on a substrate, and the transistor includes a gate structure and two source/drain regions. Subsequently, a cap layer is formed on the ILD layer and on the transistor, and a plurality of openings that penetrate through the cap layer and the ILD layer until reaching the source/drain regions are formed. Afterward, a conductive layer is formed to cover the cap layer and fill the openings, and a part of the conductive layer is further removed for forming a plurality of first contact plugs, wherein a top surface of a remaining conductive layer and a top surface of a remaining cap layer are coplanar, and the remaining cap layer totally covers a top surface of the gate structure.

主权项

1. A method of forming a semiconductor structure having at least a contact plug, comprising:
forming at least a transistor and an inter-layer dielectric (ILD) layer on a substrate, wherein the transistor comprises a gate structure and two source/drain regions; forming a cap layer on the ILD layer and on the transistor; forming a plurality of openings penetrating through the cap layer and the ILD layer until reaching the source/drain regions; forming a conductive layer covering the cap layer and filling the openings; and removing a part of the conductive layer for forming a plurality of first contact plugs, wherein a top surface of a remaining conductive layer and a top surface of a remaining cap layer are coplanar, and the remaining cap layer totally covers a top surface of the gate structure.