| 发明名称 |
Methods for Forming Semiconductor Devices Using Sacrificial Layers |
| 摘要 |
A fabricating method for a semiconductor device is provided. The fabricating method includes providing a first wafer, forming a sacrificial layer on the first wafer, forming a release layer on the sacrificial layer, forming an adhesive layer on the release layer, and placing a second wafer on the adhesive layer and bonding the first wafer to the second wafer. |
| 申请公布号 |
US2014199810(A1) |
申请公布日期 |
2014.07.17 |
| 申请号 |
US201414153545 |
申请日期 |
2014.01.13 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Park Jin-Ho;Kang Pil-Kyu;Kim Tae-Yeong;Park Byung-Lyul;Park Jum-Yong;Lee Kyu-Ha;Jung Deok-Young;Choi Gil-Heyun |
| 分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A fabricating method for a semiconductor device comprising:
providing a first wafer; forming bumps on the first wafer; forming a sacrificial layer on the bumps of the first wafer; forming a release layer on the sacrificial layer; forming an adhesive layer on the release layer; and placing a second wafer on the adhesive layer and bonding the first wafer to the second wafer. |
| 地址 |
Suwon-si KR |
