SEMICONDUCTOR SUBSTRATE

摘要

A semiconductor substrate comprises: a seed layer disposed on a substrate; a buffer layer disposed on the seed layer; a plurality of nitride semiconductor layers disposed on the buffer layer; and at least one strain control layer provided between the plurality of nitride semiconductor layers. The buffer layer comprises a plurality of stepped regions and one or more heterogeneous regions. The plurality of stepped regions include the same nitride semiconductor material. The heterogeneous regions include the nitride semiconductor material which differs from the nitride semiconductor material of the stepped regions.