发明名称 STRING SELECTION STRUCTURE OF THREE-DIMENSIONAL SEMICONDUCTOR DEVICE
摘要 A three-dimensional semiconductor device includes first and second selection lines stacked one on the other. An upper line horizontally crosses over the first and second selection lines. First and second vertical patterns vertically cross the first and second selection lines. The first and second vertical patterns are connected in common to the upper line. Each of the first and second vertical patterns constitutes first and second selection transistors that are connected in series to each other. The first selection transistors of the first and second vertical patterns are controlled by the first and second selection lines, respectively.
申请公布号 US2014198572(A1) 申请公布日期 2014.07.17
申请号 US201314088127 申请日期 2013.11.22
申请人 LEE CHANGHYUN;HWANG SUNG-MIN 发明人 LEE CHANGHYUN;HWANG SUNG-MIN
分类号 H01L23/50;G11C16/08 主分类号 H01L23/50
代理机构 代理人
主权项 1. A three-dimensional semiconductor device, comprising: a selection line; first and second upper lines horizontally crossing over the selection line; and first and second vertical patterns vertically crossing the selection line, the first and second vertical lines connected to the first and second upper lines, respectively, wherein each of the first and second vertical patterns overlaps both of the first and second upper lines, when viewed in plan view.
地址 Suwon-si KR