RFID TAGS BASED ON SELF-ASSEMBLY NANOPARTICLES

摘要

A semiconductor device comprising a gate electrode; an insulating layer in electrical connection with the gate electrode; a source electrode and a drain electrode; and a semiconducting channel layer configured to selectively allow electrically connection between the source electrode and the drain electrode based on the voltage on the gate electrode; wherein the semiconducting channel layer comprises metal nanoparticles; and the semiconducting channel layer is in contact with the source electrode, the drain electrode and the insulating layer. A method of manufacturing the semiconductor device of the present invention is also disclosed.

主权项

1. A semiconductor device comprising
a) a gate electrode; b) an insulating layer in electrical connection with said gate electrode; c) a source electrode and a drain electrode; and d) a semiconducting channel layer configured to selectively allow electrically connection between said source electrode and said drain electrode based on the voltage on said gate electrode; wherein said semiconducting channel layer comprises metal nanoparticles; and said semiconducting channel layer is in contact with said source electrode, said drain electrode and said insulating layer.