Semiconductor Mask Blanks with a Compatible Stop Layer

摘要

Provided is a method for creating a mask blank that includes a stop layer. The stop layer is optically compatible and process compatible with other layers included as part of the mask blanks. Such blanks may include EUV, phase-shifting, or OMOG masks. The stop layer includes molybdenum, silicon, and nitride in a proportion that allows for compatibility and aids in detection by a residual gas analyzer. Provided is also a method for the patterning of mask blanks with a stop layer, particularly the method for removing semi-transparent residue defects that may occur due to problems in prior mask creation steps. The method involves the detection of included materials with a residual gas analyzer. Provided is also a mask blank structure which incorporates the compatible stop layer.

主权项

1. A method for creating a phase-shifting semiconductor mask blank, the method comprising:
receiving a cleaned and polished mask substrate; depositing a stop layer over the mask substrate; depositing a shifter layer over the stop layer; and depositing a metal hard mask layer over the shifter layer.