CAPACITIVE SENSOR INTEGRATED ONTO SEMICONDUCTOR CIRCUIT

摘要

There is disclosed a capacitive sensor on a passivation layer of a semiconductor circuit such as an ASIC, and a method for manufacturing such sensor. The system and method may comprise: forming a bottom electrode layer and landing pad (520) on a portion of the passivation layer located over active circuitry of the ASIC; forming a gas sensitive layer (530) onto the bottom electrode layer and the landing pad; creating a via (540) through the gas sensitive layer to expose a portion of the landing pad; forming a top electrode layer (550) onto the gas sensitive layer, wherein the top electrode layer completely overlays a surface area of the bottom electrode layer, and wherein the forming process for the top electrode layer deposits a portion of the top electrode layer into the via hole, thereby forming an electrical connection between the top electrode layer and the landing pad.