| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which inhibit the occurrence of cracks in a conductive layer exposed by a pass-through slot formed in a semiconductor substrate.SOLUTION: A semiconductor device manufacturing method comprises, for example, forming a wiring layer (wiring 24) which is formed on a second principal surface of a semiconductor substrate (silicon substrate 10) and on an inner wall of a pass-through slot (through via 22) having a second opening which pierces the semiconductor substrate from the second principal surface of the semiconductor substrate in a thickness direction for exposing a region which includes a region corresponding to a first opening (opening 16A) without being in contact with the region, and the wiring layer is electrically connected to the conductive layer (pad electrode 14) via the second opening. Or, a semiconductor device manufacturing method comprises forming a wiring layer which is formed on a second principal surface of a semiconductor substrate and on an inner wall of a pass-through slot having a second opening which pierces the semiconductor substrate in a thickness direction and is arranged in a second region of the second principal surface of the semiconductor substrate and away from a first region corresponding to a first opening, and the wiring layer is connected to a conductive layer via the second opening.</p> |
