Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first portion. An ion source region is formed over the switching region. A second electrode is formed over the ion source region. Some embodiments include a memory cell having a switching region between a pair of electrodes. The switching region is configured to be reversibly transitioned between a low resistive state and a high resistive state. The switching region includes two or more discrete portions, with one of the portions not having a non-oxygen component in common with any composition directly against it in the high resistive state.
申请公布号
WO2014109859(A1)
申请公布日期
2014.07.17
申请号
WO2013US74411
申请日期
2013.12.11
申请人
MICRON TECHNOLOGY, INC. A CORPORATION OF THE STATE OF DELAWARE