| 摘要 |
The objective of the present invention provides a solid-state imaging device. An solid-state imaging device according to an embodiment includes: a semiconductor substrate which has a pixel region, a peripheral circuit region, a first main surface, and a second main surface; a wiring structure which is installed on the first main surface of the semiconductor substrate and has first wiring layers which are electrically connected to the peripheral circuit region; a second wiring layer which is the peripheral circuit region and also is installed in the second main surface of the semiconductor substrate; a third wiring layer which is installed in the upper part of the second wiring layer; and a plurality of through electrodes which is electrically connected to the second and third wiring layers and the wiring structure and penetrates the semiconductor substrate. |
