SEMICONDUCTOR DEVICE AND FORMING THE SAME

摘要

A semiconductor device is disclosed. The semiconductor device includes a substrate which has a an active region and a device isolation layer which defines the active region, a gate electrode on the active region, a source/drain region provided on the active region of both sides of the gate electrode, a buffer insulating layer on the device isolation layer, an etch stop layer which is formed on the buffer insulating layer and is extended on the gate electrode and the source/drain region, a first interlayer dielectric on the etch stop layer, and a first contact and a second contact which penetrate the first interlayer dielectric and the etch stop layer, touch the source/drain region and the buffer insulating layer, respectively, and are separated from each other.