发明名称 |
METAL LAYER FABRICATION METHOD FOR SEMICONDUCTOR DEVICE |
摘要 |
Disclosed is a method for forming a metal layer of a semiconductor device. The method for forming a metal layer of a semiconductor device according to an embodiment of the present invention includes forming a nuclear generation layer on a semiconductor substrate; and forming a metal layer on the nuclear generation layer having a predetermined thickness while removing impurities included inside the metal layer. |
申请公布号 |
KR20140089646(A) |
申请公布日期 |
2014.07.16 |
申请号 |
KR20130000704 |
申请日期 |
2013.01.03 |
申请人 |
WONIK IPS CO., LTD. |
发明人 |
YOON, WON JUN;RYU, DONG HO;PARK, YOUNG HOON |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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