发明名称 Data input circuit of nonvolatile memory device
摘要 The data input circuit of a nonvolatile memory device includes a redundancy multiplexer configured to selectively output normal data and redundancy data to an internal global data line in response to a redundancy signal, a plurality of pipe registers coupled to the internal global data line and configured to latch normal data or redundancy data received through the internal global data line in response to a plurality of respective latch signals, and an output multiplexer configured to sequentially output the latched data in response to a plurality of selection signals.
申请公布号 US8780645(B2) 申请公布日期 2014.07.15
申请号 US201113226585 申请日期 2011.09.07
申请人 Hynix Semiconductor Inc. 发明人 Park Jong Tai;Song Won Sub
分类号 G11C7/10 主分类号 G11C7/10
代理机构 IP & T Group LLP 代理人 IP & T Group LLP
主权项 1. A data input circuit of a nonvolatile memory device, comprising: a redundancy multiplexer configured to selectively output normal data and redundancy data to an internal global data line in response to a redundancy signal; a plurality of pipe registers each coupled to the internal global data line and configured to latch the normal data or the redundancy data received through the internal global data line in response to a plurality of respective latch signals; and an output multiplexer configured to sequentially output the latched data in response to a plurality of selection signals, wherein each of the pipe registers comprises: a transfer gate configured to transfer the normal data or the redundancy data in response to one of the latch signals; anda pipe latch configured to temporarily store the transferred data and output the stored data to the output multiplexer.
地址 Gyeonggi-do KR