| 发明名称 | Semiconductor device and method of producing the same | ||
| 摘要 | According to one embodiment, a semiconductor device includes a semiconductor substrate, wiring lines formed above the semiconductor substrate, and an air gap formed between the adjacent wiring lines. In the semiconductor device, top surfaces and side walls of the wiring lines are covered with the diffusion prevention film, and the air gap is in contact with the interconnects via a diffusion prevention film. | ||
| 申请公布号 | US8779590(B2) | 申请公布日期 | 2014.07.15 |
| 申请号 | US201213362174 | 申请日期 | 2012.01.31 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Isobayashi Atsunobu |
| 分类号 | H01L23/48;H01L21/768 | 主分类号 | H01L23/48 |
| 代理机构 | Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A semiconductor device comprising: a semiconductor substrate; a contact layer formed above the semiconductor substrate; wiring lines formed above the contact layer, top surfaces and side walls of the wiring lines being covered with a diffusion prevention film, a top surface of the contact layer located between the adjacent wiring lines being covered with the diffusion prevention film; a first insulating layer formed above the top surface of the wiring lines; and an air gap formed by the side walls of the adjacent wiring lines, the contact layer and the first insulating layer, the air gap being in contact with the wiring lines via the diffusion prevention film. | ||
| 地址 | Tokyo JP | ||