GST CMP slurries

摘要

The present invention provides chemical-mechanical polishing (CMP) compositions suitable for polishing a substrate comprising a germanium-antimony-tellurium (GST) alloy. The CMP compositions of the present invention are aqueous slurries comprising a particulate abrasive, a water-soluble surface active agent, a complexing agent, and a corrosion inhibitor. The ionic character of the surface active material (e.g., cationic, anionic, or nonionic) is selected based on the zeta potential of the particulate abrasive. A CMP method for polishing a GST alloy-containing substrate utilizing the composition is also disclosed.

主权项

1. An aqueous chemical-mechanical polishing (CMP) composition for polishing germanium-antimony-tellurium (GST) alloys, the composition comprising an aqueous carrier containing:
(a) a particulate abrasive selected from the group consisting of a colloidal silica abrasive and ceria abrasive; (b) a water soluble surface active material; (c) an amino acid corrosion inhibitor; and (d) a complexing agent; wherein the surface active material is selected based on the zeta potential of the particulate abrasive, such that when the abrasive has a positive zeta potential, the surface active material comprises a cationic material, and when the particulate abrasive has a negative zeta potential, the surface active material comprises an anionic material, a nonionic material, or a combination thereof.