Field effect transistor, integrated circuit element, and method for manufacturing the same

摘要

A field effect transistor of an embodiment of the present invention includes, a semiconductor substrate containing Si atoms; a protruding structure formed on the semiconductor substrate; a channel region formed in the protruding structure and containing Ge atoms; an under channel region formed under the channel region in the protruding structure and containing Si and Ge atoms, the Ge composition ratio among Si and Ge atoms contained in the under channel region continuously changing from the channel region side to the semiconductor substrate side; a gate insulating film formed on the channel region; and a gate electrode formed on the gate insulating film on the channel region.

主权项

1. A method for manufacturing a field effect transistor, the method comprising:
forming a protruding structure on a semiconductor substrate containing Si atoms; by thermal oxidization, forming a channel region containing Ge atoms in the protruding structure; by changing the temperature of the thermal oxidization from a high temperature to a low temperature, forming an under channel region containing Si and Ge atoms under the channel region in the protruding structure, the Ge composition ratio among Si and Ge atoms contained in the under channel region continuously changing from the channel region side to the semiconductor substrate side; forming a gate insulating film on the channel region; and forming a gate electrode on the gate insulating film on the channel region.